CURRENT OSCILLATIONS DUE TO FILAMENTARY DOUBLE INJECTION IN DIODES WITH DEEP LEVELS

Current oscillations occurring in the positive differential resistance region of the d.c. I-V characteristics of Au-compensated n-type silicon pin diodes have been investigated. The experimental results strongly suggest that the current oscillations are caused by the formation of unstable filaments prior to the occurrence of stable filaments which are connected with the negative differential resistance region typical for double injection diodes with deep levels. On the basis of this model the degree of modulation could be increased up to 30% in our diodes. © 1979.