INFLUENCE OF RECOMBINATION CENTER DATA ON IV CHARACTERISTICS OF SILICON P+-I-N+ DIODES

被引：20

作者：

DUDECK, I ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEW PHYS,D-4400 MUNSTER,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.323495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：4786 / 4790

页数：5

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共 22 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] ASHLEY KL, 1963, THESIS CARNEGIE I TE
[3] THERMAL CAPTURE CROSS-SECTION OF FREE-ELECTRONS AT NEUTRAL GOLD CENTERS IN N-TYPE SILICON
BARBOLLA, J
PUGNET, M
BRABANT, JC
BROUSSEAU, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 495 - 498
[4] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON
BARNETT, AM
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4215 - &
[5] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS
BARON, R
[J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &
[6] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
BRAUN, S
GRIMMEISS, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2789 - 2794
[7] DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL
DEULING, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2179 - &
[8] GOLD AS A RECOMBINATION CENTRE IN SILICON
FAIRFIELD, JM
GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[9] PROPERTIES OF GALLIUM ARSENIDE DOUBLE-INJECTION DEVICES
FERRO, AP
GHANDHI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4015 - &
[10] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS
HOLONYAK, N
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &