LOW-FREQUENCY CURRENT OSCILLATIONS IN HIGH-RESISTIVITY, AU-DOPED SILICON JUNCTIONS WITH 2 SCHOTTKY CONTACTS

被引：3

作者：

KASSING, R

KAHLER, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 12卷 / 01期

关键词：

D O I：

10.1002/pssa.2210120122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：209 / &

共 8 条

[1]

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[3]

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