TUNNELING BETWEEN TOTALLY QUANTIZED LEVELS IN GAAS/ALGAAS ASYMMETRIC TRIPLE-BARRIER HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS

被引：13

作者：

ASAHI, H ^{[1
]}

TEWORDT, M ^{[1
]}

SYME, RT ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

MACE, DR ^{[1
]}

FROST, JEF ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron transport is studied in GaAs/AlGaAs asymmetric triple-barrier resonant tunneling structures in a high magnetic field perpendicular to the interfaces. Besides the resonance peaks arising from tunneling between two quantum wells, a series of fine structure is observed in the valley region of the current-voltage characteristics, which is attributed to electron transitions between well defined totally quantized levels (Landau levels) in the two wells, together with the emission of a longitudinal optical phonon. In the voltage region of the main current peak, any structures which shift with magnetic field are not observed, suggesting that the tunneling in this bias region is mainly determined by DELTA-n = 0 elastic transitions.

引用

页码：803 / 805

页数：3

共 13 条

[1]

DAVIES RA, 1987, GEC-J RES, V5, P65

[2]

FAINI G, 1990, 17TH GALL ARS REL CO

[3] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].