OXYGEN FRUSTRATION AND THE INTERSTITIAL CARBON-OXYGEN COMPLEX IN SI

被引：49

作者：

JONES, R ^{[1
]}

OBERG, S ^{[1
]}

机构：

[1] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.68.86

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interstitial carbon-oxygen complex is one of the dominant defects produced in electron irradiated Si. In spite of much work, there is no consensus on its structure and a recent model of Trombetta and Watkins seems inconsistent with the lack of strong O-related vibrational modes expected from bond-centered O. Our ab initio cluster calculations reveal very unusual bonding of O in these complexes but yield vibrational modes and isotope shifts which are in reasonable agreement with experiment.

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页码：86 / 89

页数：4

相关论文

共 33 条

[1] ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND DIFFUSED O-18 [J].

ABOUELFO.FA ;

NEWMAN, RC .

SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1409-1411

[2]

ALMINNINGEN A, 1963, ACTA CHEM SCAND, V17, P2455

[3] FAR INFRARED SPECTRUM AND STRUCTURE OF DISILOXANE [J].

ARONSON, JR ;

LORD, RC ;

ROBINSON, DW .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :1004-1007

[4]

Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[5] ELECTRONIC-STRUCTURE OF INTERSTITIAL CARBON IN SILICON [J].

BESSON, M ;

DELEO, GG .

PHYSICAL REVIEW B, 1991, 43 (05) :4028-4033

[6] CARBON-RELATED RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

DAVIES, G ;

OATES, AS ;

NEWMAN, RC ;

WOOLLEY, R ;

LIGHTOWLERS, EC ;

BINNS, MJ ;

WILKES, JG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (06) :841-855

[7] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

WOOLLEY, R ;

NEWMAN, RC ;

OATES, AS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19) :L499-L503

[8] UNIAXIAL-STRESS ANALYSIS OF THE 0.79 EV VIBRONIC BAND IN IRRADIATED SILICON [J].

FOY, CP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :2059-2067

[9] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

ALDER, BJ .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :980-990

[10] ABINITIO CALCULATION OF THE PHONON FREQUENCIES IN SILICON USING SMALL ATOMIC CLUSTERS [J].

JONES, R .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (14) :L271-L273

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