共 11 条
GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF HIGHLY STRAINED DEVICE QUALITY INASP/INP MULTIPLE QUANTUM-WELL STRUCTURES
被引:21
作者:
HOU, HQ
[1
]
TU, CW
[1
]
CHU, SNG
[1
]
机构:
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词:
D O I:
10.1063/1.104733
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
InAs(x)P(1-x)/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
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页码:2954 / 2956
页数:3
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