GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF HIGHLY STRAINED DEVICE QUALITY INASP/INP MULTIPLE QUANTUM-WELL STRUCTURES

被引：21

作者：

HOU, HQ ^{[1
]}

TU, CW ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.104733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs(x)P(1-x)/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.

引用

页码：2954 / 2956

页数：3