PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDY OF SHORT-PERIOD (GAAS)N/(ALAS)N SUPERLATTICES WITH N = 1-15

被引：1

作者：

HAMAGUCHI, C

NAKAZAWA, T

MATSUOKA, T

OHYA, T

TANIGUCHI, K

FUJIMOTO, H

IMANISHI, K

KATO, H

WATANABE, Y

机构：

[1] KANSEI GAKUIN UNIV,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN

[2] TOSHIBA CO LTD,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN

[3] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1016/0749-6036(91)90168-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoreflectance and photoluminescence measurements were performed in (GaAs)n/(AlAs)n (n = 1 - 15) short-period superlattices in the temperature range from 25 K to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been observed as well as main signals associated with the direct allowed transitions. This assignment is supported by the measurement and analysis of the temperature dependence of the photoluminescence intensity. © 1991.

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页码：449 / 452

页数：4

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