METAL-INSULATOR TRANSITIONS IN PURE AND DOPED V2O3

被引：430

作者：

MCWHAN, DB ^{[1
]}

MENTH, A ^{[1
]}

REMEIKA, JP ^{[1
]}

BRINKMAN, WF ^{[1
]}

RICE, TM ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.7.1920

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1920 / 1931

页数：12

相关论文

共 37 条

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[30] EFFECTS OF IMPURITIES ON METAL-INSULATOR TRANSITION
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