MODELING OF THE GROWTH OF GAAS BY THE LEC TECHNIQUE .1. THERMAL DISTRIBUTION IN THE CRYSTAL

被引：11

作者：

CROWLEY, AB ^{[1
]}

STERN, EJ ^{[1
]}

HURLE, DTJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90573-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：697 / 708

页数：12

共 14 条

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[8] THE MINIMIZATION OF THERMAL-STRESSES DURING THE GROWTH OF GAAS CRYSTALS [J].

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JOURNAL OF CRYSTAL GROWTH, 1988, 88 (03) :397-410

[9] MODELING OF THE GROWTH OF GAAS BY THE LEC TECHNIQUE .2. THERMAL-STRESS DISTRIBUTION AND INFLUENCE OF INTERFACE SHAPE [J].

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EVANS, KE ;

BACON, DJ .

JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) :709-719

[10] THERMOELASTIC ANALYSIS OF GAAS IN LEC GROWTH CONFIGURATION .2. TEMPORAL EVOLUTION OF THE STRESS-FIELD [J].

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JOURNAL OF CRYSTAL GROWTH, 1988, 88 (03) :341-352

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