THE MINIMIZATION OF THERMAL-STRESSES DURING THE GROWTH OF GAAS CRYSTALS

被引：13

作者：

MEDUOYE, GO

BACON, DJ

EVANS, KE

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 03期

关键词：

D O I：

10.1016/0022-0248(88)90014-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：397 / 410

页数：14

共 14 条

[1]

Boley B. A., 1960, THEORY THERMAL STRES

[2] FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE-CRYSTALS [J].

DUSEAUX, M ;

JACOB, G .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :790-793

[3] TEMPERATURE PROFILE AND THERMAL-STRESS CALCULATIONS IN GAAS CRYSTALS GROWING FROM THE MELT [J].

DUSEAUX, M .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :576-590

[4]

GRANT IP, 1984, COMMUNICATION

[5] THE ROLE OF CRYSTAL DIAMETER AND IMPURITY HARDENING ON THE THRESHOLD FOR DISLOCATION FORMATION IN LEC GAAS [J].

JORDAN, AS ;

PARSEY, JM .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :280-286

[6] THE THEORY AND PRACTICE OF DISLOCATION REDUCTION IN GAAS AND INP [J].

JORDAN, AS ;

VONNEIDA, AR ;

CARUSO, R .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :555-573

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[8] A COMPARATIVE-STUDY OF THERMAL-STRESS INDUCED DISLOCATION GENERATION IN PULLED GAAS, INP, AND SI CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR ;

NIELSEN, JW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3331-3336

[9] A THERMOELASTIC ANALYSIS OF THE THERMAL-STRESS PRODUCED IN A SEMI-INFINITE CYLINDRICAL SINGLE-CRYSTAL DURING THE CZOCHRALSKI GROWTH [J].

KOBAYASHI, N ;

IWAKI, T .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :96-110

[10] THERMOELASTIC ANALYSIS OF GAAS IN LEC GROWTH CONFIGURATION .1. EFFECT OF LIQUID ENCAPSULATION ON THERMAL-STRESSES [J].

MOTAKEF, S ;

WITT, AF .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :37-50

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