MODELING OF THE GROWTH OF GAAS BY THE LEC TECHNIQUE .2. THERMAL-STRESS DISTRIBUTION AND INFLUENCE OF INTERFACE SHAPE

被引：7

作者：

MEDUOYE, GO

EVANS, KE

BACON, DJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90574-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：709 / 719

页数：11

共 14 条

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