REDUCTION OF DARK CURRENT IN PHOTODIODES BY THE USE OF A RESONANT-CAVITY

被引：21

作者：

SVERDLOV, BN ^{[1
]}

BOTCHKAREV, AE ^{[1
]}

TERAGUCHI, N ^{[1
]}

SALVADOR, AA ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

PHOTODIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The advantages of using a resonant cavity enhancement scheme to decrease the dark current of heterojunction photodiodes are considered. It is shown that the employment of very thin absorption layers, allowed by this scheme, provides a significant reduction of the generation component of the dark current. Experimental results for InGaAs/InAlAs pin photodiodes suggest that the tunnelling component of the dark current can be also suppressed in resonant cavity enhanced photodetectors.

引用

页码：1019 / 1021

页数：3

共 5 条

[1] MULTILAYER REFLECTORS BY MOLECULAR-BEAM EPITAXY FOR RESONANCE ENHANCED ABSORPTION IN THIN HIGH-SPEED DETECTORS
CHIN, A
CHANG, TY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 339 - 342
[2] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
FORREST, SR
LEHENY, RF
NAHORY, RE
POLLACK, MA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 322 - 325
[3] LOW-VOLTAGE HIGH-GAIN RESONANT-CAVITY AVALANCHE PHOTODIODE
KUCHIBHOTLA, R
SRINIVASAN, A
CAMPBELL, JC
LEI, C
DEPPE, DG
HE, YS
STREETMAN, BG
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) : 354 - 356
[4] SZE SM, 1981, PHYSICS SEMICONDUCTO
[5] UNLU MS, 1990, APPL PHYS LETT, V57, P750, DOI 10.1063/1.103410

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