(ALGA)AS STRIP BURIED-HETEROSTRUCTURE LASERS PREPARED BY HYBRID CRYSTAL-GROWTH

被引：11

作者：

TSANG, WT

LOGAN, RA

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 10期

关键词：

D O I：

10.1049/el:19820271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：397 / 398

页数：2

相关论文

共 9 条

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[2] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39
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[5] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469
[6] LOW-CURRENT-THRESHOLD STRIP-BURIED-HETEROSTRUCTURE LASERS WITH SELF-ALIGNED CURRENT INJECTION STRIPES
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 644 - 647
[7] HIGH-POWER FUNDAMENTAL-TRANSVERSE-MODE STRIP BURIED HETEROSTRUCTURE LASERS WITH LINEAR LIGHT-CURRENT CHARACTERISTICS
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 311 - 314
[8] GAAS-ALXGA1-X AS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH AL0.65GA0.35AS (GE-DOPED) LIQUID-PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENT
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 730 - 733
[9] HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 587 - 589