COMPLEMENTARY MOS TRANSISTORS

被引：13

作者：

WHITE, MH

CRICCHI, JR

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 10期

关键词：

D O I：

10.1016/0038-1101(66)90075-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：991 / +

页数：1

共 40 条

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[2]

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[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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SAH, CT .

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[10] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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