A SOFT-X-RAY PHOTOEMISSION-STUDY OF THE EPITAXIAL CAF2/SI(111) INTERFACE

被引：5

作者：

MORGAN, SJ

LAW, AR

WILLIAMS, RH

机构：

来源：

VACUUM | 1988年 / 38卷 / 4-5期

关键词：

D O I：

10.1016/0042-207X(88)90084-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：381 / 383

页数：3

共 8 条

[1] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].

FARROW, RFC ;

SULLIVAN, PW ;

WILLIAMS, GM ;

JONES, GR ;

CAMERON, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420

[2] SILICON INTERACTION WITH LOW-ELECTRONEGATIVITY METALS - INTERDIFFUSION AND REACTION AT THE CA/SI(111) INTERFACE [J].

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PETERSON, DT .

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[3] FORMATION OF A NEW ORDERED STRUCTURE OF CAF2/SI(111) BY ULTRAVIOLET-IRRADIATION [J].

KARLSSON, UO ;

HIMPSEL, FJ ;

MORAR, JF ;

MCFEELY, FR ;

RIEGER, D ;

YARMOFF, JA .

PHYSICAL REVIEW LETTERS, 1986, 57 (10) :1247-1250

[4]

MORGAN SJ, IN PRESS

[5] PHOTOEMISSION-STUDY OF BONDING AT THE CAF2-ON-SI(111) INTERFACE [J].

OLMSTEAD, MA ;

UHRBERG, RIG ;

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 35 (14) :7526-7532

[6] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF CAF2/SILICON INTERFACES [J].

PONCE, FA ;

ANDERSON, GB ;

OKEEFE, MA ;

SCHOWALTER, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1121-1122

[7] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J].

RIEGER, D ;

HIMPSEL, FJ ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

YARMOFF, JA .

PHYSICAL REVIEW B, 1986, 34 (10) :7295-7306

[8] ELECTRON-BEAM-INDUCED DECOMPOSITION OF ION BOMBARDED CALCIUM-FLUORIDE SURFACES [J].

STRECKER, CL ;

MODDEMAN, WE ;

GRANT, JT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6921-6927

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