THEORETICAL-STUDY OF THE SI(100) SURFACE RECONSTRUCTION

被引:378
作者
RAMSTAD, A
BROCKS, G
KELLY, PJ
机构
[1] Philips Research Laboratories
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 20期
关键词
D O I
10.1103/PhysRevB.51.14504
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the results of a systematic study of the reconstruction of the Si(100) surface based upon total energies calculated within the framework of the local-density approximation. We focus on the extent to which total energy differences may be calculated reliably by examining these differences for the ideal surface and four proposed reconstructions: p(2×1) symmetric, p(2×1) asymmetric, p(2×2), and c(4×2). The calculations were performed using norm-conserving pseudopotentials and a plane-wave basis. The convergence of the total energy differences was assessed by varying the energy cutoff used to truncate the plane-wave basis and the number of sampling points used to perform Brillouin zone (BZ) integrals over a large range. The effect of optimizing atomic geometries as a function of the energy cutoff and density of BZ sampling points was determined. With the exception of the p(2×2) and c(4×2) reconstructions, whose energies only differ by 3 meV per dimer, we are able to unambiguously determine the energy ordering of the five systems studied. Disagreements between previous calculations can be largely understood in terms of the different energy cutoffs and BZ samplings used. The electronic structures of the different reconstructions are calculated and compared. © 1995 The American Physical Society.
引用
收藏
页码:14504 / 14523
页数:20
相关论文
共 87 条
[21]  
DIJKKAMP D, 1992, SPRINGER SERIES MATE, V17
[22]   ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE [J].
ENTA, Y ;
SUZUKI, S ;
KONO, S .
PHYSICAL REVIEW LETTERS, 1990, 65 (21) :2704-2707
[23]   ELECTRONIC EXCITATIONS ON SI(100)(2X1) [J].
FARRELL, HH ;
STUCKI, F ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ ;
LEVINSON, M .
PHYSICAL REVIEW B, 1984, 30 (02) :721-725
[24]   ACCURATE EXCHANGE-CORRELATION POTENTIAL FOR SILICON AND ITS DISCONTINUITY ON ADDITION OF AN ELECTRON [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (22) :2415-2418
[25]   THE ATOMIC-STRUCTURE OF VICINAL SI(001) AND GE(001) [J].
GRIFFITH, JE ;
KOCHANSKI, GP .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (04) :255-289
[26]   EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM [J].
GUNNARSSON, O ;
LUNDQVIST, BI .
PHYSICAL REVIEW B, 1976, 13 (10) :4274-4298
[27]   SCANNING TUNNELING MICROSCOPY OF SI(001) [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357
[28]   SIMPLIFIED METHOD FOR CALCULATING THE ENERGY OF WEAKLY INTERACTING FRAGMENTS [J].
HARRIS, J .
PHYSICAL REVIEW B, 1985, 31 (04) :1770-1779
[29]   EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].
HEDIN, L ;
LUNDQVIS.BI .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&
[30]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115