INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS

被引：41

作者：

DANNEVILLE, F

DAMBRINE, G

HAPPY, H

TADYSZAK, P

CAPPY, A

机构：

[1] Institut d'Electronique et de Microélectronique du Nord, U.M.R. C.N.R.S. No. 9929, Département Hyperfréquences et Semiconducteurs, Domaine scientifique et universitaire de Villeneuve d'Ascq, BP 69

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 05期

关键词：

D O I：

10.1016/0038-1101(95)98678-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the influence of the gate leakage current on the noise performance of MESFETs and MODFETs is investigated. Both a simple analytical model and a more realistic numerical model have been developed. It is shown that the noise performance is strongly dependent on the gate leakage current value, especially at low frequency. The theoretical results are discussed and compared with experimental ones.

引用

页码：1081 / 1087

页数：7

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