ELECTRICAL ACTIVATION OF SILICON IMPLANTED IN SEMIINSULATING GAAS - ROLE OF BORON AND THE MIDGAP ELECTRON TRAP (EL2)

被引：16

作者：

MORROW, RA ^{[1
]}

机构：

[1] OREGON GRAD CTR,DEPT APPL PHYS & ELECT ENGN,BEAVERTON,OR 97006

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3671 / 3676

页数：6

共 20 条

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