COMPENSATION EFFECTS ON OPTICALLY PUMPED INTERSUBBAND ABSORPTION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

被引：13

作者：

LI, WJ

MCCOMBE, BD

CHAMBERS, FA

DEVANE, GP

RALSTON, J

WICKS, G

机构：

[1] AMOCO CORP,NAPERVILLE,IL 60566

[2] CORNELL UNIV,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.42.11953

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of intersubband transitions and cyclotron resonance (CR) have been carried out on lightly donor-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures. Absorption coefficients of CR and intersubband resonances combined with calculations of coupling efficiency, give an oscillator strength of about 1. Measurements of CR absorption versus pump intensity show clear saturation at high intensities. Results demonstrate that the observed intersubband transitions are due to free electrons and that the large photogenerated excess free-electron density is due to compensation by acceptors.

引用

页码：11953 / 11956

页数：4

共 11 条

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