INFLUENCE OF CRYSTALLINE DEFECTS AND RESIDUAL-STRESS ON ELECTRICAL CHARACTERISTICS OF SOS MOS DEVICES

被引：11

作者：

ONGA, S ^{[1
]}

HATANAKA, K ^{[1
]}

KAWAJI, S ^{[1
]}

YASUDA, Y ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1143/JJAP.17.413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 422

页数：10

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