HOT PHONON EFFECTS IN SILICON FIELD-EFFECT TRANSISTORS

被引：25

作者：

ARTAKI, M ^{[1
]}

PRICE, PJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1317 / 1320

页数：4

共 7 条

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