DIFFUSION-COEFFICIENT OF ELECTRONS IN SILICON

被引：132

作者：

BRUNETTI, R ^{[1
]}

JACOBONI, C ^{[1
]}

NAVA, F ^{[1
]}

REGGIANI, L ^{[1
]}

BOSMAN, G ^{[1
]}

ZIJLSTRA, RJJ ^{[1
]}

机构：

[1] STATE UNIV UTRECHT,EXPTL FYS LAB,UTRECHT,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6713 / 6722

页数：10

共 33 条

[1]

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[2]

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[3]

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[4]

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[9] HOT-ELECTRON DIFFUSION IN CDTE [J].

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[10] FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J].

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