学术探索
学术期刊
新闻热点
数据分析
智能评审

THE THEORY OF RECTIFICATION AND INJECTION AT A METAL-SEMICONDUCTOR CONTACT

被引：12
作者：
GUNN, JB
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1954年 / 67卷 / 415期
关键词：
D O I：
10.1088/0370-1301/67/7/309
中图分类号：
Q [生物科学];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：575 / 581
页数：7
相关论文
共 9 条
[1]  
BETHE HA, 1942, MIT RAD LAB REP, V43, P12
[2]   AREA CONTACTS ON GERMANIUM [J].
GRANVILLE, JW ;
HENISCH, HK .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (392) :650-651
[3]   MEASUREMENT OF THE SURFACE PROPERTIES OF GERMANIUM [J].
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (413) :409-421
[4]   A STUDY OF CARRIER INJECTING PROPERTIES OF EMITTER CONTACTS AND LIGHT SPOTS AT NORMAL AND MODERATELY ELEVATED TEMPERATURES [J].
HOGARTH, CA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406) :845-858
[5]   MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].
RYDER, EJ .
PHYSICAL REVIEW, 1953, 90 (05) :766-769
[6]   For the theory of semiconductor junction and peak rectifier . [J].
Schottky, W. .
ZEITSCHRIFT FUR PHYSIK, 1939, 113 (5-6) :367-414
[7]   THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J].
SCHWARZ, RF ;
WALSH, JF .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1715-1720
[8]   HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034
[9]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
1