IN0.53GA0.47AS/ALAS RESONANT TUNNELING DIODES WITH PEAK CURRENT DENSITIES IN EXCESS OF 450KA/CM2

被引：39

作者：

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely high peak current density resonant tunneling diodes, with high peak-to-valley current ratios, have been obtained in the InP-based InGaAlAs material system by using very thin AlAs barriers and In0.53Ga 0.47As wells, within In0.53Ga0.47As bounding regions. A peak current density of 460 kA/cm2 has been obtained for diodes with 4-ML AlAs barriers and a 16-ML In0.53Ga0.47As well. The room-temperature peak-to-valley current ratio of these devices is 4. From a measurement of the dependence of the peak current density on barrier thickness, a value for the strength, m*V, of the pseudomorphic AlAs barrier on In0.53Ga0.47As is found to be 0.07±0.01 eV.

引用

页码：4310 / 4312

页数：3

共 7 条

[1]

BROEKAERT TPE, 1989, 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P559

[2] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].