RADIATION EFFECTS ON SIGNAL AND NOISE CHARACTERISTICS OF GAAS-MESFET MICROWAVE-AMPLIFIERS

被引：6

作者：

BORREGO, JM

GUTMANN, RJ

MOGHE, SB

机构：

[1] Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/TNS.1979.4330279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of fast neutron and gamma radiation on the electrical characteristics of low noise microwave GaAs MESFET amplifiers has been evaluated. The change in the noise figure and gain at S and X-band was determined 15 2 determined at neutron fluences between 3x10 to lx10 n/cm 7 and gamma dose of 2x10 rads (Si). The radiation induced changes are described and the causes for them are discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：5092 / 5099

页数：8

共 5 条

[1] RADIATION EFFECTS ON GAAS MESFETS [J].