DETECTION OF MOBILE ION DURING THE ANODIC-OXIDATION OF SILICON

被引:17
作者
MENDE, G
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D O I
10.1149/1.2130071
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2085 / 2086
页数:2
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[5]   REMOVAL OF THIN-FILMS OF P AND B IMPLANTED SILICON USING ANODIC-OXIDATION [J].
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Schmidt PF, 1977, J ELECTROCHEM SOC, V124, P1950, DOI 10.1149/1.2133206
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