THE INFLUENCE OF TECHNOLOGICAL FACTORS ON THE HYDROGEN SENSITIVITY OF MOSFET SENSORS

被引：21

作者：

FOMENKO, S ^{[1
]}

GUMENJUK, S ^{[1
]}

PODLEPETSKY, B ^{[1
]}

CHUVASHOV, V ^{[1
]}

SAFRONKIN, G ^{[1
]}

机构：

[1] PHYS MEASUREMENTS RES INST,PENSA 440033,RUSSIA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1016/0925-4005(92)80003-G

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Integrated hydrogen sensors based on Pd-SiO2-Si structures have been developed and investigated. The sensor silicon chip consists of the following elements: test capacitor, MOSFETs, heater and thermosensor. Four different fabrication methods for the palladium thin-film deposition and two contact bonding methods have been used. The sensitivities of the eight types of sensor samples have been studied at low hydrogen concentrations (from 1 ppm up to 1%). The experimental results of these investigations are presented here.

引用

页码：7 / 10

页数：4

共 9 条

[1]

ACKELID V, 1985, IEEE T ELECTRON DEV, V7, P353

[2] KINETICS OF HYDROGEN ADSORPTION AND ABSORPTION - CATALYTIC GATE MIS GAS SENSORS ON SILICON [J].