POSITRON TRAPPING AT NATIVE VACANCIES IN CDTE CRYSTALS - IN DOPING EFFECT

被引：18

作者：

CORBEL, C

BAROUX, L

KIESSLING, FM

GELYSYKES, C

TRIBOULET, R

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

[2] UNIV PARIS 06,SRI LAB,F-75231 PARIS 05,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90029-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Position lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in agreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (V(Cd)-In)- complexes, it is found that positrons are trapped by negative ions.

引用

页码：134 / 138

页数：5

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