ANNEALING OF INDIUM-IMPLANTED CDTE

被引：38

作者：

KALISH, R

DEICHER, M

SCHATZ, G

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

[2] UNIV CONSTANCE,FAK PHYS,D-7750 CONSTANCE,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4793 / 4799

页数：7

共 13 条

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[7] ANNEALING BEHAVIOR OF IN IMPLANTED IN SI STUDIED BY PERTURBED ANGULAR-CORRELATION [J].

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[8] ANNEALING STAGE OF ELECTRON RADIATION DAMAGES IN IN-DOPED N-TYPE CDTE CRYSTALS [J].

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[9]

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[10]

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