ANNEALING BEHAVIOR OF IN IMPLANTED IN SI STUDIED BY PERTURBED ANGULAR-CORRELATION

被引：15

作者：

KAUFMANN, EN

KALISH, R

NAUMANN, RA

LIS, S

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] RUTGERS STATE UNIV,NEW BRUNSWICK,NJ 08903

[3] PRINCETON UNIV,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.324216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3332 / 3336

页数：5

共 15 条

[1] HALL-EFFECT MEASUREMENT ON INDIUM-IMPLANTED SILICON [J].

BERGAMINI, P ;

FABRI, G ;

PANDARESE, F .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :18-+

[2]

BLOOD P, COMMUNICATION

[3]

ECHT O, 1975, INT M HYPERFINE INTE

[4] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[5] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J].

FLADDA, G ;

BJORKQVIST, K ;

ERIKSSON, L ;

SIGURD, D .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :313-+

[6]

Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

[7]

FRAUENFELDER H, 1965, ALPHA BETA GAMMA RAY, V2, P997

[8]

Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[9]

LEDERER CM, 1967, TABLE ISOTOPES, P252

[10] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J].

NORTH, JC ;

GIBSON, WM .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :126-&

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