HALL-EFFECT MEASUREMENT ON INDIUM-IMPLANTED SILICON

被引：3

作者：

BERGAMINI, P

FABRI, G

PANDARESE, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 01期

关键词：

D O I：

10.1063/1.1653235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：18 / +

页数：1

共 13 条

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PHYSICS LETTERS A, 1968, A 27 (04) :193-&

[3] IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS [J].

DAVIES, DE .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :229-&

[4] EXPERIMENTAL EVIDENCE FOR INTERSTITIAL IN AND T1 IN ION-IMPLANTED SILICON [J].

DAVIES, JA ;

ERIKSSON, L ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1968, 12 (08) :255-&

[5]

Elliot R.P, 1965, CONSTITUTION BINARY

[6] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[8] DOPING OF SILICON BY ION IMPLANTATION [J].

ITOH, T ;

INADA, T ;

KANEKAWA, K .

APPLIED PHYSICS LETTERS, 1968, 12 (08) :244-&

[9]

Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[10]

JOHANSSON NG, 1970, SOLID STATE ELECTRON, V13, P123, DOI 10.1016/0038-1101(70)90183-8

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