TEMPERATURE-DEPENDENCE OF RADIATION-DAMAGE AND ITS ANNEALING IN SILICON DETECTORS

被引:33
作者
ZIOCK, HJ
BOISSEVAIN, JG
HOLZSCHEITER, K
KAPUSTINSKY, JS
PALOUNEK, APT
SONDHEIM, WE
BARBERIS, E
CARTIGLIA, N
LESLIE, J
PITZL, D
ROWE, WA
SADROZINSKI, HFW
SEIDEN, A
SPENCER, E
WILDER, M
ELLISON, JA
FLEMING, JK
JERGER, S
JOYCE, D
LIETZKE, C
REED, E
WIMPENNY, SJ
FERGUSON, P
FRAUTSCHI, MA
MATTHEWS, JAJ
SKINNER, D
机构
[1] UNIV CALIF SANTA CRUZ,SANTA CRUZ INST PARTICLE PHYS,SANTA CRUZ,CA 95064
[2] UNIV CALIF RIVERSIDE,RIVERSIDE,CA 92521
[3] UNIV MISSOURI,ROLLA,MO 65401
[4] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131
关键词
D O I
10.1109/23.256577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (approximately 0-degrees-C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 10(14)/cm2 650 MeV protons. Very pronounced temperature dependencies were observed.
引用
收藏
页码:344 / 348
页数:5
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