STRUCTURE AND ELECTRICAL-PROPERTIES OF TIN/GAAS SCHOTTKY CONTACTS

被引：9

作者：

DING, J ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WEBER, ER ^{[1
]}

WASHBURN, J ^{[1
]}

FOURKAS, RM ^{[1
]}

CHEUNG, NW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 25期

关键词：

D O I：

10.1063/1.99564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2160 / 2162

页数：3

共 9 条

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[8] REFRACTORY-METAL NITRIDE RECTIFYING CONTACTS ON GAAS [J].

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[9] THERMAL-STABILITY AND BARRIER HEIGHT ENHANCEMENT FOR REFRACTORY-METAL NITRIDE CONTACTS ON GAAS [J].

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