REFRACTORY-METAL NITRIDE RECTIFYING CONTACTS ON GAAS

被引：32

作者：

ZHANG, LC ^{[1
]}

LIANG, CL ^{[1
]}

CHEUNG, SK ^{[1
]}

CHEUNG, NW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1716 / 1722

页数：7

共 16 条

[1] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[2] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS [J].

JACKSON, TN ;

DEGELORMO, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1676-1679

[3] HIGH-TEMPERATURE STABLE W-GAAS SCHOTTKY-BARRIER [J].

MATSUMOTO, K ;

HASHIZUME, N ;

TANOUE, H ;

KANAYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L393-L395

[4] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

[5]

OHNISHI T, 1985, MAY WORKSH REFR MET

[6] SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON M-P+-N STRUCTURES INCLUDING FREE-CARRIERS [J].

SCHWARTZ, GP ;

GUALTIERI, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1266-1268

[7] CHARACTERIZATION OF MOLYBDENUM DISILICIDE GALLIUM-ARSENIDE SCHOTTKY-BARRIER CONTACTS AT ELEVATED-TEMPERATURES [J].

TRUMAN, JK ;

HOLLOWAY, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :992-995

[8] CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

UCHITOMI, N ;

NAGAOKA, M ;

SHIMADA, K ;

MIZOGUCHI, T ;

TOYODA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1392-1397

[9] TITANIUM NITRIDE SCHOTTKY-BARRIER CONTACTS TO GAAS [J].

WALDROP, JR .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :87-89

[10] NB/GAAS AND NBN/GAAS SCHOTTKY BARRIERS [J].

WU, XW ;

ZHANG, LC ;

BRADLEY, P ;

CHIN, DK ;

VANDUZER, T .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :287-289

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