A MICROWAVE METHOD FOR CONTACTLESS MEASUREMENT OF THE LIFETIME OF FREE-CARRIERS IN SILICON-WAFERS

被引:2
作者
OTAREDIAN, T [1 ]
MIDDELHOEK, S [1 ]
THEUNISSEN, MJJ [1 ]
机构
[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词
D O I
10.1051/jphyscol:1988428
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学科分类号
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页码:145 / 148
页数:4
相关论文
共 3 条
[1]   THE STUDY OF CHARGE CARRIER KINETICS IN SEMICONDUCTORS BY MICROWAVE CONDUCTIVITY MEASUREMENTS [J].
KUNST, M ;
BECK, G .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3558-3566
[2]   ANALYSIS OF THE INTERACTION OF A LASER-PULSE WITH A SILICON-WAFER - DETERMINATION OF BULK LIFETIME AND SURFACE RECOMBINATION VELOCITY [J].
LUKE, KL ;
CHENG, LJ .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2282-2293