IDENTIFICATION OF SI/SIO2 INTERFACE PROPERTIES IN THIN-FILM TRANSISTORS WITH CHARGE-PUMPING TECHNIQUE

被引：7

作者：

BALASINSKI, A

WORLEY, J

HUANG, KW

LIOU, FT

机构：

[1] SGS-THOMSON Microelectronics, Advanced Technology Development, Carrollton

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 08期

关键词：

D O I：

10.1149/1.2050080

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Frequency- and voltage-dependent charge pumping characteristics of thin film transistors (TFTs) are discussed. Methods for identifying interface trap and oxide charge parameters based on these characteristics are presented. Correlation between defect densities as obtained from the charge pumping and current-voltage (I-V) characteristics is investigated before and after hydrogen annealing used to control trap parameters in TFTs. Compared to the charge pumping technique, the I-V method was found to be less sensitive to the variations of Si/SiO2 interface properties.

引用

页码：2717 / 2721

页数：5

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