STM STUDY OF THE SIC(0001)ROOT-3X-ROOT-3 SURFACE

被引：142

作者：

OWMAN, F

MARTENSSON, P

机构：

[1] Department of Physics, Linköping University

来源：

SURFACE SCIENCE | 1995年 / 330卷 / 01期

关键词：

LOW INDEX SINGLE CRYSTAL SURFACES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00427-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have used scanning tunnelling microscopy to study the root 3 x root 3 reconstruction of the Si-terminated 6H-SiC(0001) surface. We find that the images are consistent with a structural model composed of 1/3 layer of Si or C adatoms in threefold-symmetric sites on top of the outermost Si-C bilayer, similar to the reconstructions observed for 1/3 monolayer of e.g. group-III metals on the Si(111) surface. Additionally, we discuss the nature of the most frequently occurring defects on the root 3 X root 3 surfaces as well as the stacking sequence of the atomic layers below the reconstructed surface layer.

引用

页码：L639 / L645

页数：7

共 25 条

[1] FABRICATION OF SIC EPITAXIAL STRUCTURES FOR DEVICES BY THE METHOD OF SUBLIMATION IN AN OPEN SYSTEM [J].