CONDUCTANCE FLUCTUATIONS NEAR THE LOCALIZED-TO-EXTENDED TRANSITION IN NARROW SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：41

作者：

KASTNER, MA

KWASNICK, RF

LICINI, JC

BISHOP, DJ

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.36.8015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8015 / 8031

页数：17

共 55 条

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