LOW-TEMPERATURE FORMATION OF SILICON-NITRIDE AND OXIDE-FILMS BY THE SIMULTANEOUS USE OF A MICROWAVE ION-SOURCE AND AN ICB SOURCE

被引:4
作者
ISHIKAWA, J [1 ]
MATSUGATANI, K [1 ]
TAKAOKA, G [1 ]
机构
[1] KYOTO UNIV,ION BEAM ENGN LAB,KYOTO 606,JAPAN
关键词
D O I
10.1016/0042-207X(89)91101-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1111 / 1113
页数:3
相关论文
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