MATRIX-EFFECT CORRECTION IN OXIDE CRYSTAL AUGER-ELECTRON SPECTROSCOPY

被引:7
作者
ANDERSEN, JET
机构
[1] University of Copenhagen, Laboratory of Physical Chemistry, H. C. Ørsted Institute, DK-2100 Copenhagen
关键词
D O I
10.1016/0039-6028(91)90372-Y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A simple model is presented for the calculation of surface elemental composition, surface impurity content and surface chemical termination in complex oxide crystal surfaces. The model is based upon Auger electron spectroscopic measurements and takes electronic inelastic mean free paths or attenuation lengths and bulk crystallographic data into consideration. Different results are obtained when using either the attenuation length or the electronic inelastic mean free path for the surfaces stoichiometric weights. MgO(100), SrTiO3(100), LaAlO3(100), and YBa2Cu3O7-x(001) are used as test samples. Uncertainties are estimated at 10-20%.
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页码:337 / 349
页数:13
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