INITIAL-STAGE OF EPITAXIAL-GROWTH AT LOW-TEMPERATURE OF GAAS AND ALAS ON SI BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE) AND MBE

被引：10

作者：

GONZALEZ, Y ^{[1
]}

GONZALEZ, L ^{[1
]}

BRIONES, F ^{[1
]}

VILA, A ^{[1
]}

CORNET, A ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] LCMM,DEPT FIS APLICADA & ELECTR,E-08028 BARCELONA,SPAIN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 123卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90598-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

First stages of GaAs, AlAs and GaAs-on-AlAs growth on Si by atomic layer molecular beam epitaxy (ALMBE) and conventional MBE has been studied by in situ RHEED and Auger electron spectroscopy (AES) techniques and by high resolution electron microscopy (HREM) after growth. Our results allow us to assess the growth conditions necessary to achieve monolayer by monolayer growth of GaAs on Si.

引用

页码：385 / 392

页数：8

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