INITIAL-STAGES OF GAAS AND ALAS GROWTH ON SI SUBSTRATES - ATOMIC-LAYER EPITAXY

被引：25

作者：

KITAHARA, K

OHTSUKA, N

OZEKI, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：700 / 703

页数：4

共 11 条

[1] AKIYAMA M, 1984, JPN J APPL PHYS, V45, pL1107
[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
BIEGELSEN, DK
PONCE, FA
SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[3] DAVIS LE, 1976, HDB AUGER ELECTRON S, P13
[4] INITIAL-STAGES OF THE SCHOTTKY-BARRIER FORMATION FOR AN ABRUPT AL-GAAS(100) INTERFACE
DURAN, JC
PLATERO, G
FLORES, F
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2389 - 2393
[5] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION
HULL, R
FISCHERCOLBRIE, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 851 - 853
[6] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM
OZEKI, M
MOCHIZUKI, K
OHTSUKA, N
KODAMA, K
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1509 - 1511
[7] KINETIC PROCESSES IN ATOMIC-LAYER EPITAXY OF GAAS AND AIA USING A PULSED VAPOR-PHASE METHOD
OZEKI, M
MOCHIZUKI, K
OHTSUKA, N
KODAMA, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1184 - 1186
[8] OZEKI M, 1987, 19TH C SOL STAT DEV, P457
[9] SANTLA T, 1984, 16TH C SOL STAT DEV, P647
[10] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY
TAKASUGI, H
KAWABE, M
BANDO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L584 - L586