KINETIC PROCESSES IN ATOMIC-LAYER EPITAXY OF GAAS AND AIA USING A PULSED VAPOR-PHASE METHOD

被引：32

作者：

OZEKI, M

MOCHIZUKI, K

OHTSUKA, N

KODAMA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1184 / 1186

页数：3

共 14 条

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[3] DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787
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[5] REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS
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[6] LEY MR, 1984, J CRYST GROWTH, V68, P431
[7] MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L513 - L515
[8] MOLECULAR LAYER EPITAXY
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[9] NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1
[10] FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 422 - 430