LaNiO3: A promising material for contact with YBa2CU3O7-x thin films

被引：6

作者：

Kumar, D ^{[1
]}

Satyalakshmi, KM ^{[1
]}

Hegde, MS ^{[1
]}

Apte, PR ^{[1
]}

Pinto, R ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,SOLID STATE ELECTR GRP,BOMBAY 400005,MAHARASHTRA,INDIA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 04期

关键词：

D O I：

10.1109/77.482140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial LaNiO3 metallic oxide thin films have been grown on c-axis oriented YBa2Cu3O7-delta thin films on LaAlO3 substrates by pulsed laser deposition technique and the interface formed between the two films has been examined by measuring the contact conductance of the same. The specific contact conductance of the interface measured using a modified four probe method was found to be 1.4 to 6 x 10(4) ohm(-1) cm(-2) at 77 K, There are indications that contact conductance can be brought closer to that obtained for noble metal-YBCO interface.

引用

页码：3498 / 3503

页数：6

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