INSITU ARSENIC-DOPED POLYSILICON FOR VLSI APPLICATIONS

[1] ADAMS AC, 1983, VLSI TECHNOLOGY, P100

[2] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[3] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[4] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[5] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[6] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2051 - 2055

[7] Rung R. D., 1982, International Electron Devices Meeting. Technical Digest, P237

[8] WHITE F, 1985, ELECTRONICS MATERIAL

[1] ADAMS AC, 1983, VLSI TECHNOLOGY, P100

[2] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[3] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[4] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[5] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[6] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2051 - 2055

[7] Rung R. D., 1982, International Electron Devices Meeting. Technical Digest, P237

[8] WHITE F, 1985, ELECTRONICS MATERIAL