ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS/AL0.45GA0.55AS/AL0.3GA0.7AS COUPLED WELL SYSTEMS

被引：7

作者：

BHATTACHARYA, PK ^{[1
]}

ZEBDA, Y ^{[1
]}

SINGH, J ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured electron and hole multiplication factors and impact ionization coefficients in 550 angstrom GaAs/500 angstrom Al0.3Ga0.7As quantum wells with an intermediate Al0.45Ga0.55As barrier (50 and 100 angstrom) inserted in the well region. It is seen that while the measured value of alpha(E) is insensitive to the position of the intermediate barrier in the well, the value of beta(E) is very sensitive. The value of alpha/beta varies from less than unity to 5, depending on the position of this barrier. These results suggest that hole confinement and scattering play a major role in making the value of alpha/beta greater than unity in these multilayered structures.

引用

页码：2791 / 2793

页数：3

共 6 条

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[6]

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