FAR-INFRARED PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECTS IN ANTIMONY DOPED GERMANIUM

被引：14

作者：

NAGASAKA, K ^{[1
]}

NARITA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT MATERIAL PHYS,TOYONAKA,OSAKA,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1973年 / 35卷 / 03期

关键词：

D O I：

10.1143/JPSJ.35.788

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：788 / 796

页数：9

共 9 条

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[3]

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[4]

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JAMES, HM .

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[6] FAR-INFRARED ABSORPTION SPECTRA OF SB-DOPED GE AT LOW TEMPERATURE [J].

NISIDA, Y ;

HORII, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) :388-+

[7]

REUSZER JH, 1964, PHYS REV, V165, P369

[8] LOW TEMPERATURE PROPERTIES OF RESTRAHLEN POWDER FILTERS IN FAR-INFARED REGION [J].

SAKAI, K ;

NAKAGAWA, Y ;

YOSHINAGA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (07) :792-+

[9] ABSORPTION AND PHOTOCONDUCTIVITY SPECTRA OF IN-DOPED GE IN FAR-INFRARED REGION [J].

SUGAWARA, F ;

NAKAMURA, T ;

HIROSE, T ;

KOBAYASHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) :1108-+

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