LOW-THRESHOLD INJECTION-LASER IN HGCDTE

被引：5

作者：

BOUCHUT, P

DESTEFANIS, G

MILLION, A

COLIN, T

BABLET, J

机构：

[1] LETI (CEA-Technologies Avancées), Grenoble Cedex, F38041

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 08期

关键词：

CDZNTE SUBSTRATE; DOUBLE HETEROSTRUCTURES; HGCDTE; IN DOPING; INJECTION LASER; MBE;

D O I：

10.1007/BF02817525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Narrow-stripe transverse injection lasers in HgCdTe have been successfully fabricated and operated. The double heterostructure of the laser was grown by molecular beam epitaxy on a {111} CdZnTe substrate. The n type base was extrinsically indium doped but other p type layers were only doped by deviation from stoichiometry. Laser emission at 3.4 mum and 3.56 mum was obtained at 78K under pulsed current conditions. Threshold current density as low as 90 A/cm2 at 40K was achieved. Over 65K, the threshold current variation with temperature showed a sharp increase due to a drift-current leakage in the structure.

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页码：1061 / 1065

页数：5

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