GROUP-V ACCEPTOR DOPING OF CDXHG1-XTE LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：28

作者：

CAPPER, P ^{[1
]}

WHIFFIN, PAC ^{[1
]}

EASTON, BC ^{[1
]}

MAXEY, CD ^{[1
]}

KENWORTHY, I ^{[1
]}

机构：

[1] MULLARD SOUTHAMPTON,MILLBROOK IND ESTATE,SOUTHAMPTON,HANTS,ENGLAND

来源：

MATERIALS LETTERS | 1988年 / 6卷 / 10期

关键词：

CRYSTALS - Epitaxial Growth - HALL EFFECT DEVICES - Fabrication - SEMICONDUCTOR DEVICES - Junctions;

D O I：

10.1016/0167-577X(88)90125-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Layers of Cd//xHg//1// minus //x Te have been grown by metal-organic vapor phase epitaxy and doped with arsenic and with phosphorus. This has been achieved by establishing metal-rich gas phase conditions during growth and obviates the need for high temperature 'activation' type anneals. Data from Hall measurements and secondary ion mass spectrometry on annealed samples are in close agreement.

引用

页码：365 / 368

页数：4

共 12 条

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