INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DIFFUSION

被引：57

作者：

SCHWARZ, SA

MEI, P

VENKATESAN, T

BHAT, R

HWANG, DM

SCHWARTZ, CL

KOZA, M

NAZAR, L

SKROMME, BJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1051 / 1053

页数：3

共 17 条

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[2]

[Anonymous], ELECTRONIC STRUCTURE

[3]

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[6]

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KAMAGAKI K, 1987, J APPL PHYS, V62, P1124

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[9] INTERMIXING PROCESS OF INGAAS INP MQW GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AT THERMAL ANNEALING [J].

NAKASHIMA, K ;

KAWAGUCHI, Y ;

KAWAMURA, Y ;

ASAHI, H ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1620-L1622

[10] ZN-DIFFUSION-INDUCED INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES [J].

NAKASHIMA, K ;

KAWAGUCHI, Y ;

KAWAMURA, Y ;

IMAMURA, Y ;

ASAHI, H .

APPLIED PHYSICS LETTERS, 1988, 52 (17) :1383-1385

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